| PART |
Description |
Maker |
| ESD9X3.3S ESD9X3.3ST5 ESD9X5.0ST5 |
ESD Protection Diodes(ESD淇??浜??绠?
ESD Protection Diodes(ESD保护二极 ESD保护二极管（防静电保护二极管
ESD Protection Single Diode In Ultra Small SOD-923 Package
|
ON Semiconductor
ONSEMI
|
| CPDUR12V CPDUR24V CPDUR5V0 |
ESD Suppressor Diodes, V-C=15V, V-ESD=8kV
ESD Suppressor Diodes, V-C=47V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDVR085V0C-HF |
Halogen Free ESD Array, V-C=5V, V-PV=8kV, V-BD=6.1V
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDU5V0U CPDU5V0U-15 |
ESD Suppressor Diodes, V<sub>C</sub>=12.5V, V<sub>ESD</sub>=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQT5V0-HF |
Halogen Free ESD Diodes, V<sub>C</sub>=11.6V, V<sub>ESD</sub>=8kV
Low Profile SMD ESD Protection Diode
|
Comchip Technology
|
| TESDH5V0A |
Discrete Devices-ESD Protection Diode & Array-ESD Protection Diode & Array
|
Taiwan Semiconductor
|
| DF2S16FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.8LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2LFU07 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S8.2FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.3FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
